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Originally Posted by Cathar
For a point-source, indeed it is a hemi-sphere, but for a rectangular source that really is quite large in proportion to the vertical distance travelled, I don't think the model you're trying to use applies very well.
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You are quite right there. I do think however that the rectangular die has most of its heat generating components in a small section(s) of the overall die, more closely approximating a point heatsource. But of course there is heat spreading in the silicon itself too.
But if the isothermals directly above the die are like an inverted half globe, I think the model works.
Could all be crap.
