Bill > I didn't say to take only die T° at a certain point (copper isn't silicon, processor get numerous hot spots, flux has a very complicated shape and never "flat" like a bare die, thermal probe in processor die could be near an edge or elsewhere). If I had a my die done, I'll take several T° as well the IHS internal T° to get a global view, but IHS center T° above core is normally enough to characterize a system thermal resistance (with a groove on it like Intel TTV or with a tiny hole to fit TC/RTD just above center die at 0.2-0.3mm from IHS surface with my version), die T° reacts as IHS center do. Absolute T° in copper die won't be never the same as a processor so we can't say if I got 2°C difference with my die between X and Y, I'll have 2°C better on my processor between X and Y, this is not true. Die T° is just to complete data and see if relations are linear between 2 different coolers, we could have a better view of how an central impingement will affect IHS T° and core T° in comparison of a simple WB for example, flux spreading, etc. We can imagine 5 thermal probes in IHS, one for center and one in each quadrant, why not..
Last edited by Roscal; 11-22-2005 at 05:02 PM.
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