I have just completed a BE Electronics and computer engineering degree.
Brians256 :
You are clutching at straws here. Not to be rude but although your enthusiam isn't, your electronic knowledge and expertise are lacking.
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The dc-dc converter is designed as a whole. Swap out one thing and you have to change another, and then another....etc. There are many more things that you have to design around than just Rdson, Gc etc. Trace length, Inductor resistance, ESR in the filter Capacitors. Change something and you really can't know (without a good spice simulation of the before and after) what affect it will have.
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Oh so correct.
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Rewinding the cores with heavier wire may be of some benefit,
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STOP, you have no idea.
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After all, I can buy a couple of $5-10 MOSFET where a mobo manufacturer would want to stick with $1 or even cheaper MOSFETs. I've been reading all the marketing fluff coming out of IRF and similar manufacturers all proud of their trench FETs and so on. So, they must be making things better these days, right?
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Yeah, a MB manufacturer when buying by the millions can get a better price than you at Radioshack. And yes, they are making better semiconductor switching devices these days. You are out of your league.
Gosh, I was going quote some more but I'm tired.
If you want an efficient power converter then do not go past resonant power conversion. I suggest a Class-E resonant inverter with a resonant Class-E zero-volt-switching rectifier.
FYI. When designing with MOSFETs you must read the SOAR curves VERY carefully because your gate drive requirements change depending on how much current you intend to sink in what amount of time. Thus if you change your MOSFET the amount of current it can draw based on the [fixed] amount of gate drive given to it changes. For the better or worse? it depends. Also, the Miller effect comes in to play. When you change a voltage either side of Cds [gate-drain capacitance] the capacitance change dramatically. This [The Miller effect] manifests itself as increased gate drive requirements to achieve the same level of turn on. The Miller effect occurs due to increasing gate drive voltage (because your appling charge) and dropping drain voltage due to the transistion from blocking-state to on-state.